X-ray spectromicroscopy investigation of soft and hard breakdown in RRAM devices
نویسندگان
چکیده
منابع مشابه
X-ray spectromicroscopy investigation of soft and hard breakdown in RRAM devices.
Resistive random access memory (RRAM) is considered an attractive candidate for next generation memory devices due to its competitive scalability, low-power operation and high switching speed. The technology however, still faces several challenges that overall prohibit its industrial translation, such as low yields, large switching variability and ultimately hard breakdown due to long-term oper...
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Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive phases within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial identification of such conductive regions is a daunting task, particularly for metal-oxides capable of exhibiting multiple phases as in the case of TiOx. Here, we spatially r...
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ژورنال
عنوان ژورنال: Nanotechnology
سال: 2016
ISSN: 0957-4484,1361-6528
DOI: 10.1088/0957-4484/27/34/345705